LEADTECK, we actively pursue our role as a discrete power MOSFET supplier utilizing leading edge technology and manufacturing facilities to produce quality and innovative products that will provide sustainable added values to the customers. LEADTECK utilizes the leading edge sub-micro MOSFET process with 200mm technology to achieve better performance and provides a more cost effective solution. The proprietary 750 Mcell/in 2 technology will shrink the Power MOSFET devices for better RDS(on) performance.

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Key Features

Discrete Low Voltage MOSFET:

  • Leading edge sub micro trench technology with 750Mcell/in2 technology resulting in lower die size and cost
  • Low RDSon technology to minimise conductive losses
  • Low leakage current
  • 150ˇăC or 175ˇăC junction temperature
  • High immunity to dynamic turn-on

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Career Opportunities